The
2N7000 N-Channel Enhancement Mode Field Effect Transistor.
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
High density cell design for low R
DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
