The
RD100HHF1,
is a MOS FET type transistor specifically designed for HF
High power amplifiers applications.
FEATURES
High power and High Gain:
P
out>100W, G
p>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency:
60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets. RoHS COMPLIANT
RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
