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Обновленно: 09.06.2013
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The 2SC3357, NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
FEATURES 2SC3357
Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ Vce = 10 V, Ic = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ Vce = 10 V, Ic = 40 mA, f = 1 GHz
High power gain : MAG = 10 dB TYP. @ Ic = 40 mA, f = 1 GHz
Large Ptot: Ptot = 1.2 W (Mounted on 16 cm2 x 0.7 mm (t) ceramic substrate)
Small package : 3-pin power minimold package
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